PartNumber(編碼)Chip(晶片) Material(材料)Emitting(顏色)入P(nm)InGaNRED625 Parameter(參數)SymbolMINTYPMAXUNITTESTCONDITIONForwardVoltage(順向電壓)VF2.0/2.2VIf=20mADomiWavelength(主波長) d622/627nm ReverseCurrent(反向電流)IR 10 AVR=5VPowerdissipation(消耗功率)Pd 70 mW LuminousIntensity(發(fā)光強度)IV1300/1600mcdIf=20mAPeakForwardCurrent(順向電流峰值)If(Peak) 50mA RecommendForwardCurrent(順向電流)If(Rec) 20 mA Electrostatic Discharge(靜電釋放)ESD 2000 V 1.BSOLUTE MAXIMUM RATINGS:(Ta=25℃)2.OPERATINGTEMPERATURE: 40℃TO80℃(操作溫度)3.LEADSOLDERING:260℃FOR5SECONDS(焊接條件)4.儲存條件:25℃以下60%濕度以下.