PartNumberChip MaterialEmittingP(nm)GaN/GaNRED625ParameterSymbolMINTYPMAXUNITTESTCONDITIONForwardVoltageVF2..0/2.2VIf=20mADomiWavelength d622/627nmIf=20mAReverseCurrentIR 10 AVR=5VPowerdissipationPd 70 mW LuminousIntensityIV1000/1200mcdIf=20mAAngle ()Angle 120 Dg PeakForwardCurrentIf(Peak) 50mA RecommendForwardCurrentIf(Rec) 20 mA Electrostatic DischargeESD 2000 V LifeTime50000H