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NCE N-Channel Enhancement Mode Power MOSFET
Description The NCE3050K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =50A RDS(ON) 11mΩ @ VGS=10V RDS(ON) 16mΩ @ VGS=5V ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible Power Supply 100% UIS TESTED! | Schematic diagram Marking and pin assignment TO-252-2Ltop view |
Package Marking And Ordering Information
Device Marking | Device | Device Package | Reel Size | Tape width | Quantity |
NCE3050K | NCE3050K | TO-252-2L | - | - | - |
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter | Symbol | Limit | Unit |
Drain-Source Voltage | VDS | 30 | V |
Gate-Source Voltage | VGS | ±20 | V |
Drain Current-Continuous | ID | 50 | A |
Drain Current-Continuous(TC=100℃) | ID (100℃) | 35 | A |
Pulsed Drain Current | IDM | 140 | A |
Maximum Power Dissipation | PD | 60 | W |
Derating factor | 0.4 | W/℃ | |
Single pulse avalanche energy (Note 5) | EAS | 70 | mJ |
Operating Junction andStorageTemperatureRange | TJ,TSTG | -55 To 175 | ℃ |
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2) | RθJC | 2.5 | ℃/W |
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